Method of manufacturing nitride semiconductor device including SiC substrate and apparatus for manufacturing nitride semiconductor device

ABSTRACT

Excitation light is irradiated onto a GaN layer on a silicon carbide substrate constituting a layered product that is set on a stage. Then light is emitted from a defective part caused by a structural defect of the silicon carbide substrate out of the GaN layer. By using this light luminescence phenomena, a position of a defective part of the silicon carbide substrate can be detected.

This application is a continuation of U.S. patent application Ser. No.10/932,028, filed Sep. 2, 2004, the subject matter of which applicationis incorporated herein by reference in its entirety.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to a substrate inspection method andsubstrate inspection device that are suitable for use in a siliconcarbide (SiC) substrate constituting a nitride semiconductor device, anda method of manufacturing the nitride semiconductor device and anapparatus for manufacturing for the nitride semiconductor device usingthe substrate inspection method and the substrate inspection device.

2. Description of Related Art

At the moment, research on nitride semiconductors is activelyprogressing in the fields of optical devices and electronic devicesbecause of advantages in physical characteristics.

In particular, in the electronic device field, the development of highelectron mobility transistors (hereafter called “HEMT”) using nitridesemiconductors is now in progress.

In the case of nitride semiconductor crystals, growing bulk singlecrystals is difficult because vapor pressure is high, so metal-organicchemical vapor deposition (hereafter called MOCVD) is widely used.

The MOCVD method is an epitaxial growth technology for forming a desiredcrystal layer on a substrate by sequentially supplying predeterminedmaterial gas onto the substrate under high temperature.

Recently in the electronic device field, a silicon carbide substrate(hereafter also called SiC substrate) is receiving attention. This isbecause the thermal conductivity of SiC is high, about 7-9 times thethermal conductivity of sapphire (Al₂O₃), which is generally used as thesubstrate material.

So now the technical development of HEMT, which can be obtained bygrowing nitride semiconductor crystals on the SiC substrate by the MOCVDmethod, and which has superb high frequency characteristics and highoutput characteristics, is on-going.

For example, according to the “Video Enhance System SMR-100” catalogfrom Nikon (as of August, 1994), the visual inspection of a manufacturedHEMT can be performed by optical microscopic images.

However depositing a nitride semiconductor thin film on the SiCsubstrate by the abovementioned MOCVD method has the following problems.

First, in the SiC substrate as a crystal substrate, holes calledmicro-pipes, which penetrate from the front to the back of thesubstrate, exist as structural defects. The diameter of a micro-pipediffers depending on the growth conditions of single crystals, but isseveral μm to several tens μm in some cases.

Therefore if the film thickness of the nitride semiconductor thin filmgrown on the SiC substrate is normally 2 μm-3 μm, a part of themicro-pipes remain as defects after the thin film is grown.

In other words, the structural defects of the SiC substrate causes thegeneration of defects in the nitride semiconductor thin film on thissubstrate (this is called defect propagation).

Also in the SiC substrate, various structural defects exist in somecases, other than the abovementioned micro-pipes, such as macro defects(e.g. voids, grain boundaries), dislocations (e.g. spirals, blades,mosaics) and surface defects (surface polishing scratches, surfaceroughness). In these cases as well, a defect is propagated into thenitride semiconductor thin film deposited thereon.

HEMT, which has an SiC substrate with such structural defects, causesoperation failures, which drops the reliability as a device.

However the inspection by the system shown in the abovementioneddocument is not the detection of structural defects but is merely avisual inspection for observing the surface of the device anddimensional errors, and it is impossible to inspect the quality of thedevice by detecting the abovementioned structural defects.

With the foregoing in view, it is an object of the present invention toprovide a substrate inspection method and a substrate inspection devicethat can detect the structural defects generated inside the substrate,and a manufacturing method for a nitride semiconductor device and amanufacturing device for a nitride semiconductor device which use thissubstrate inspection method and substrate inspection device.

SUMMARY OF THE INVENTION

To achieve this object, the method of manufacturing a nitridesemiconductor device according to the present invention comprises thefollowing steps.

The method is for manufacturing a nitride semiconductor device which iscomprised of a layered product where a nitride semiconductor thin filmis deposited on a silicon carbide substrate, comprising an irradiationstep, a defective part specification step, a cutting step and anelimination step. In the irradiation step, an excitation light isirradiated onto the nitride semiconductor thin film. In the defectivepart specification step, a position of the defective part of the siliconcarbide substrate, generated in the nitride semiconductor thin film bythe irradiation of excitation light, is specified using the light basedon the defect of the silicon carbide substrate. In the cutting step, theprocessed layered product, after the layered product is processed, iscut at each predetermined device dimension to create a plurality ofchips. In the elimination step, chips having the defective part at thespecified position is eliminated from the chips.

By this, the luminescence phenomena, which is generated based on thedefect of the nitride semiconductor thin film, is detected using asimple configuration with an optical microscope, and the position of thedefective part of the nitride semiconductor thin film can be detected.

As a result, the position of the defective part of the SiC substrate,having a defect that causes defect propagation to the nitridesemiconductor thin film, can be specified.

Since the position of the defective part of the SiC substrate of theprocessed layered product can be specified using the position of thedefective part which was specified in the layered product beforeprocessing, a chip having the defective part can be eliminated.

It is preferable that the defective part specification step furthercomprises a step of detecting the light emitting in the nitridesemiconductor thin film and acquiring first information includinginformation on the intensity of the light, and a step of specifying anarea where the intensity of the light among the first information is areference value or above as a defective part.

By this, in addition to the abovementioned effects, mapping data, whichis data on the defective position and non-defective position of thenitride semiconductor thin film, can be acquired quickly and with goodreproducibility. As a result, the position of the defective part of theSiC substrate can be specified automatically and efficiently.

It is preferable that a mark, which can be identified from the outside,is formed on the layered product in advance. Further the mark isrecognized from first information, and then the first information andthe identified mark are associated with each other and stored in astorage section. In the defective part specification step, a secondinformation on a mark that the processed layered product has isacquired, then the first information, that is stored associating with amark the same as the mark of the processed layered product identified bythe second information, is read and collated, and the defective positionof the processed layered product is specified based on the informationthat was read.

By this, in addition to the abovementioned effects, the position of thedefective part of the SiC substrate of the wafer type processed layeredproduct can be specified using the mapping data, which was acquired inadvance before processing the layered product, so it is unnecessary tospecify the defective position again after processing.

Therefore chips having a defective part in the SiC substrate can beefficiently selected from the chips obtained by cutting this processedlayered product.

It is preferable that the manufacturing method further comprises aprocessing step for processing the film for forming the nitridesemiconductor device on the layered product, so that the mark of theprocessed layered product can be maintained in the status to beidentifiable from the outside, when the mark of the processed layeredproduct is recognized.

By this, in addition to the abovementioned effect, the mark of theprocessed layered product can be recognized at high precision.

The method of manufacturing a nitride semiconductor device according tothe present invention comprises the following steps.

In other words, the manufacturing method for a nitride semiconductordevice, which comprises a layered product where the nitridesemiconductor thin film is deposited on the silicon carbide substrate,comprises an irradiation step, a defective part specification step, aprocessing step, a cutting step and an elimination step. In theirradiation step, the excitation light is irradiated onto the nitridesemiconductor thin film. In the defective part specification step, aposition of the defective part of the silicon carbide substrate isspecified using the light based on the defects of the silicon carbidesubstrate generated in the nitride semiconductor thin film byirradiation of the excitation light. In the processing step, theprocessing is performed on an area other than the defective part out ofthe layered product, and the processed layered product is formed. In thecutting step, the layered product, including the processed layeredproduct, is cut at each predetermined device dimension to create aplurality of chips. In the elimination step, chips, other than the chipsincluding the processed layered product, are eliminated from the chips.

By this, the position of the defect of the nitride semiconductor thinfilm can be detected by detecting the luminescence phenomena that isgenerated based on the defect of the nitride semiconductor thin filmusing a simple configuration with an optical microscope.

As a result, a position of the defective part of the SiC substrate,which has defects that cause defect propagation to the nitridesemiconductor thin film, can be specified.

Therefore by processing only the SiC substrate portion, which does nothave a defective part of the layered product, unnecessary chips which donot include the processed layered product can be eliminated aftercutting the layered product.

It is preferable that in the defective part specification step, lightemitting in the nitride semiconductor thin film is detected, and firstinformation, including information on the intensity of the light, isacquired, and an area where the intensity of the light is a referencevalue or above is specified as the defective part from the firstinformation.

By this, in addition to the abovementioned effect, the mapping data,which is data on the defective position and non-defective position ofthe nitride semiconductor thin film, can be acquired quickly with goodreproducibility. As a result, the position of the defective part of theSiC substrate can be specified automatically and efficiently.

It is preferable that the visible light of which wavelength is 400 to600 nm is irradiated as the excitation light.

By this, in addition to the abovementioned effect, the visible light canbe irradiated not only onto the defects of the surface layer of thenitride semiconductor thin film but also onto the defects existinginside.

It is preferable that the ultraviolet light is irradiated.

By this, in addition to the abovementioned effect, only the luminescencecaused by the defects of the nitride semiconductor thin film can bedetected. If dirt and dust are attached to the surface of the nitridesemiconductor thin film, luminescence from the surface becomes weakersince the emitted light is blocked by this dirt and dust, so this dirtand dust can also be observed at the same time.

This method of manufacturing is preferably applied to the SiC substrateon which one type or two or more types of films selected from a GaNlayer, AlGaN layer and InGaN layer are deposited as the nitridesemiconductor thin film.

By this, various nitride semiconductor thin films can be used alone orcombined, so the quality of the SiC substrate constituting such nitridesemiconductor devices as high frequency and high output transistors,blue lasers and blue light emitting diodes, including HEMT, can beevaluated.

The apparatus for manufacturing the nitride semiconductor deviceaccording to the present invention has the following features in theconfiguration.

The apparatus for manufacturing a nitride semiconductor device comprisesan excitation light irradiation section for irradiating excitation lightonto a nitride semiconductor thin film out of a layered product wherethe nitride semiconductor thin film is deposited on a silicon carbidesubstrate, a defective part specification section for specifying aposition of a defective part of the silicon carbide substrate usinglight based on the defect of the silicon carbide substrate generated inthe nitride semiconductor thin film by the excitation light, a cuttingsection for processing the layered product and then cutting theprocessed layered product at each predetermined dimension to create aplurality of chips, and an elimination section for eliminating chipshaving the defective part from the chips.

According to this configuration of the apparatus for manufacturing anitride semiconductor device, the position of the defective part of thenitride semiconductor thin film can be detected by detecting theluminescence phenomena that is generated based on the defects of thenitride semiconductor thin film using a simple configuration with anoptical microscope.

As a result, a position of the defective part of an SiC substrate whichhas detects that will cause defect propagation to the nitridesemiconductor thin film can be specified.

Since the position of the defective part of the SiC substrate of theprocessed layered product can be specified using the position of thedefective part which is specified in the layered product beforeprocessing, a chip having the defective part can be eliminated.

It is preferable that the defective part specification section furtherincludes a first information acquisition section for detecting the lightemitting in the nitride semiconductor thin film and acquiring firstinformation including information on the intensity of the light, and aninformation processing section for specifying an area where theintensity of the light is a reference value or above as a defectivepart.

By this, in addition to the abovementioned effects, the position of thedefective part of the SiC substrate of the wafer type processed layeredproduct can be specified using the mapping data, which was acquired inadvance before processing the layered product, so it is unnecessary tospecify the defective position again after processing.

Therefore a chip having a defective part in the SiC substrate can beefficiently selected from the chips obtained by cutting this processedlayered product.

It is preferable that the apparatus for manufacturing further comprisesa second information acquisition section for acquiring a secondinformation on a mark formed on the processed layered product when themark, which can be identified from the outside, is formed on the layeredproduct in advance, and the defective part specification section furthercomprises a first recognition section for recognizing the mark from thefirst information, a storage section for storing the first informationand the mark recognized by the first recognition section associatingwith each other, a second recognition section for recognizing a mark,that the processed layered product has, based on the second informationacquired by the second information acquisition section, and a defectivepart collation section for reading and collating the first information,that is stored associated with a mark the same as the mark of therecognized processed layered product, from the storage section, andspecifying a defective part of the processed layered product based onthe first information that was read.

By this, in addition to the abovementioned effects, the position of thedefective part of the SiC substrate of the wafer type processed layeredproduct can be specified using the mapping data, which was acquired inadvance before processing the layered product, so it is unnecessary tospecify the defective position after processing.

Therefore a chip having a defective part in the SiC substrate can beefficiently selected from the chips obtained by cutting this processedlayered product.

It is preferable that the apparatus for manufacturing further comprisesa processing section for processing the film for forming a nitridesemiconductor device on the layered product so that the mark of theprocessed layered product can be maintained in the status to beidentifiable from the outside, when the mark of the processed layeredproduct is recognized.

By this, in addition to the abovementioned effect, the mark of theprocessed layered product can be recognized at high precision.

It is preferable that the excitation light irradiation sectionirradiates the visible light of which wavelength is 400 to 600 nm.

By this, in addition to the abovementioned effect, the visible light canbe irradiated not only onto the defects on the surface layer of thenitride semiconductor thin film, but also onto the defects existinginside.

It is preferable that the excitation light irradiation section isconstructed such that the ultraviolet light is irradiated.

By this, in addition to the abovementioned effect, only the luminescencecaused by the defects of the nitride semiconductor thin film can bedetected. If dirt and dust are attached to the surface of the nitridesemiconductor thin film, luminescence from the surface becomes weakersince the emitted light is blocked by this dirt and dust, so this dirtand dust can also be observed at the same time.

This apparatus is preferably applied to a nitride semiconductor thinfilm which includes one type or two or more types of layers selectedfrom a GaN layer, AlGaN layer and InGaN layer.

The abovementioned apparatus can be applied to substrates where variousnitride semiconductor thin films are used alone or combined, so thequality of the SiC substrate constituting such nitride semiconductordevices as high frequency and high output transistors, blue lasers andblue light emitting diodes, including HEMT, can be evaluated. Also thesubstrate inspection method according to the present invention comprisesthe following steps.

The excitation light is irradiated onto a nitride semiconductor thinfilm deposited on a silicon carbide substrate, and a position of adefective part of the silicon carbide substrate is detected using lightbased on the defect of the silicon carbide substrate generated in thenitride semiconductor thin film by the detected excitation light. Bythis, the luminescence phenomena, which is generated based on the defectof the nitride semiconductor thin film, is detected using a simpleconfiguration with an optical microscope, and the position of the defectof the nitride semiconductor thin film can be detected.

As a result, the position of the defective part of the silicon carbidesubstrate (hereafter may simply be called SiC substrate), having adefect that causes defect propagation to the nitride semiconductor thinfilm, can be specified.

It is preferable that the light emitting in the nitride semiconductorthin film is detected and information on the intensity of the light isacquired, and an area where the intensity of the light is a referencevalue or above is specified as a defective part from this information.

By this, in addition to the abovementioned effects, mapping data, whichis data on the defective position and non-defective position of thenitride semiconductor thin film, can be acquired quickly and with goodreproducibility.

As a result, the position of the defective part of the SiC substrate canbe specified automatically and efficiently.

It is preferable that the excitation light is irradiated onto the entiresurface of the nitride semiconductor thin film.

By this, in addition to the abovementioned effect, a position of thedefective part can be specified for the entire surface of the nitridesemiconductor thin film sample, and the quality of the SiC substrate canbe evaluated for the entire sample.

It is preferable that the visible light of which the wavelength is 400to 600 nm is irradiated.

By this, in addition to the abovementioned effect, the visible light canbe irradiated not only onto the defects on the surface layer of thenitride semiconductor thin film, but also onto the defects existinginside.

It is preferable that ultraviolet light is irradiated.

By this, in addition to the abovementioned effect, only the luminescencecaused by the defect of the nitride semiconductor thin film can bedetected. If dirt and dust are attached to the surface of the nitridesemiconductor thin film, luminescence from the surface becomes weakersince the emitted light is blocked by this dirt and dust, so this dirtand dust can also be observed at the same time.

The inspection method of the present invention is preferably applied toa substrate on which one type or two or more types of layers selectedfrom a GaN layer, AlGaN layer and InGaN layer are deposited as thenitride semiconductor thin film.

By this, various nitride semiconductor thin films can be used alone orcombined, so the quality of the SiC substrate constituting such nitridesemiconductor devices as high frequency and high output transistors,blue lasers and blue light emitting diodes, including HEMT, can beevaluated.

The substrate inspection device according to the present invention hasthe following features in the configuration.

The substrate inspection device comprises an excitation lightirradiation section for irradiating the excitation light onto a nitridesemiconductor thin film deposited on a silicon carbide substrate, and adefective part specification section for specifying a position of adefect of a silicon carbide substrate using light based on the defect ofthe silicon carbide substrate generated in the nitride semiconductorthin film by the excitation light.

By this, the luminescence phenomena, which is generated based on thedefect of the nitride semiconductor thin film, is detected using asimple configuration with an optical microscope, and the position of thedefect of the nitride semiconductor thin film can be detected.

As a result, the position of the defective part of the SiC substratehaving a defect, that will cause defect propagation to the nitridesemiconductor thin film, can be specified.

It is preferable that the defective part specification section furthercomprises an information acquisition section for detecting the lightemitting in the nitride semiconductor thin film and acquiringinformation on the intensity of the light, and an information processingsection for specifying an area where the intensity of the light is areference value or above as a defective part from this information.

By this, in addition to the abovementioned effects, mapping data, whichis data on the defective position and non-defective position of thenitride semiconductor thin film, can be acquired quickly and with goodreproducibility.

As a result, the position of the defective part of the SiC substrate canbe specified automatically and efficiently.

It is preferable that the excitation light from the excitation lightirradiation section is irradiated onto the entire surface of the nitridesemiconductor thin film.

By this, in addition to the abovementioned effect, a position of thedefective part can be specified for the entire surface of the nitridesemiconductor thin film sample, and the quality of the SiC substrate canbe evaluated for the entire sample.

It is preferable that the excitation light irradiation sectionirradiates the visible light, of which wavelength is 400 to 600 nm.

By this, in addition to the abovementioned effect, the visible light canbe irradiated not only onto the defects on the surface layer of thenitride semiconductor thin film, but also onto the defects existinginside.

It is preferable that the excitation light irradiation sectionirradiates the ultraviolet light as the excitation light.

By this, in addition to the abovementioned effect, only the luminescencecaused by the defect of the nitride semiconductor thin film can bedetected. If dirt and dust are attached to the surface of the nitridesemiconductor thin film, luminescence from the surface of the nitridesemiconductor thin film becomes weaker since the emitted light isblocked by the dirt and dust, so this dirt and dust can also be observedat the same time.

The inspection device is preferably applied to a substrate whichincludes one type or two or more types of layers selected from a GaNlayer, AlGaN layer and InGaN layer as the nitride semiconductor thinfilm.

By this, various nitride semiconductor thin films can be used alone orcombined, so the quality of the SiC substrate constituting such nitridesemiconductor devices a high frequency and high output transistors, bluelasers and blue light emitting diodes, including HEMT, can be evaluated.

BRIEF DESCRIPTION OF THE DRAWINGS

The foregoings and other objects, features and advantageous of thepresent invention will be better understood from the followingdescription taken in connection with the accompanying drawings, inwhich:

FIG. 1 is a diagram depicting the configuration of the substrateinspection device according to the first embodiment of the presentinvention;

FIG. 2 is a flow chart depicting the inspection method using thesubstrate inspection device of the first embodiment of the presentinvention;

FIG. 3 is a diagram depicting the configuration of the substrateinspection device according to the third embodiment of the presentinvention;

FIG. 4 is a flow chart depicting the inspection method using thesubstrate inspection device of the third embodiment of the presentinvention;

FIG. 5 is a flow chart depicting the operation of the extraction sectionof the substrate inspection device of the third embodiment of thepresent invention;

FIG. 6 is a series of diagrams depicting the manufacturing method for anitride semiconductor device of the fourth embodiment of the presentinvention;

FIG. 7 is a diagram depicting the configuration of the manufacturingapparatus of the nitride semiconductor device of the fourth embodimentof the present invention;

FIG. 8 is a flow chart depicting the operation of the first and secondidentification sections of the manufacturing device for a nitridesemiconductor apparatus of the fourth embodiment of the presentinvention;

FIG. 9 is a flow chart depicting the operation of the defective partcollation section of the manufacturing device for a nitridesemiconductor device of the fourth embodiment of the present invention;and

FIG. 10 is a flow chart depicting the manufacturing method by themanufacturing device for a nitride semiconductor device of the fourthembodiment of the present invention.

DESCRIPTION OF THE PREFERRED EMBODIMENTS

Embodiments of the present invention will now be described withreference to FIG. 1 to FIG. 10. Each drawing (excluding the flow charts)shows the shape, size and positional relationship of each constitutionalelement rough enough to assist in understanding the present invention,and therefore the present invention is not limited to the illustratedexamples. To simplify the drawings, hatching to indicate a cross-sectionshows only part of the cross-section, the rest of the cross-section isomitted. The following description is simply on the preferredembodiments, and numerical conditions shown there are not limited tothese. In each drawing, similar constitutional elements are denoted withthe same reference numerals, and redundant description thereof may beomitted.

First Embodiment

FIG. 1 is a diagram depicting the configuration of the substrateinspection device 100 of the present embodiment. In the presentembodiment, the case when the layered product 15 a, where a GaN layer152 is deposited as a nitride semiconductor thin film on the wafer typesilicon carbide (SiC) substrate 151 is used, will be described as anexample.

As FIG. 1 shows, the substrate inspection device 100 of the presentembodiment comprises an excitation light irradiation section 10 and adefective part specification section 20. The defective part is an areaof the SiC substrate that has a structural defect, and here the areaemitting light at the light intensity that is at least a predeterminedstandard value, which will be described later, will be handled as thedefective part.

The excitation light irradiation section 10 irradiates the excitationlight onto the GaN layer 152 as the nitride semiconductor thin film thatthe layered product 15 a has.

Here the excitation light irradiation section 10 comprises a stage 12 onwhich the layered product 15 a is placed, a light source 13, anarrowband filter 14, a half mirror 16 and a first lens 18.

In a direction substantially vertical to the mounting face c of thestage 12, the first lens 18 and half mirror 16 are sequentially disposedfrom the stage 12 side with a predetermined space. The half mirror 16 isdisposed at a position where the incident angle of the excitation lightfrom the light source 13, which transmitted through the narrowbandfilter 14, is 45°. The excitation light enters the layered product 15 aon the stage 12 at incident angle 90° via the first lens 18.

In this configuration example, a mercury lamp, which can irradiate blueto green visible light (wavelengths of about 400-600 nm) for example, isused as the light source 13. The excitation light is an e-line(wavelength 546 nm) or g-line (wavelength 436 nm).

The defective part specification section 20 has a second lens 22. Thesecond lens 22 forms an image of the light emitted from the GaN layer152 of the layered product 15 a (described later).

Now the substrate inspection method using the substrate inspectiondevice 100 will be described with reference to FIGS. 1 and 2.

At first, the stage 12 on which the wafer type layered product 15 a isplaced is set at the observation position (S401).

Then the excitation light from the light source 13 is irradiated ontothe GaN layer 152 of the layered product 15 a (S403). Luminescence isgenerated at the defective part of the GaN layer 152 onto which theexcitation light is irradiated. This is because the yellow band of thenitride semiconductor thin film at the defective part corresponding tothe structural defect of the SiC substrate 151 is excited by theirradiation of the excitation light, and luminescence is generated ataround wavelength 500-600 nm. The nitride semiconductor material, calleda “wide bandgap” material, is transparent to the visible light.Therefore the visible light can be irradiated not only onto the defectson the surface layer of the nitride semiconductor thin film, but alsoonto the defects existing inside.

Then the density of the luminescence from the GaN layer 152, when theimage is formed by the second lens 22, is observed by the naked eye andthe position of the defective part is specified (S405). After this, theexcitation light is irradiated onto the entire face of the GaN layer 152by moving the stage manually or automatically, so as to specify theposition of the defective part (that is, defective position) on theentire surface of the wafer type SiC substrate 151.

In this way, to use an SiC substrate for a device, the quality of theSiC substrate can be easily evaluated by a simple configuration using anoptical microscope.

Therefore the problem, where the structural defects of the SiC, whichhas better thermal conductivity than a sapphire substrate, cannot bespecified before fabricating the device, can be solved, and animprovement in yield in manufacturing devices using a SiC substrate canbe expected.

As the above description clearly shows, according to the presentembodiment, a position of the defective part of the SiC substrate can bedetected by the naked eye through the lens by using the luminescencephenomena generated based on the defect of the nitride semiconductorthin film.

In other words, the position of the defect of the SiC substrate, thatcauses defect propagation to the nitride semiconductor thin film, can bespecified.

Second Embodiment

In this embodiment, a mercury lamp, which can irradiate ultravioletlight, is used as the light source of the substrate inspection device,which is a major difference from the first embodiment.

In this configuration example, a mercury lamp, which can irradiateultraviolet light, is used rather than the light source described in thefirst embodiment. In this case, the excitation light is an i-line(wavelength 365 nm) or j-line (wavelength 313 nm).

In the case of the first embodiment, the entire surface of the sample isbrightly lit since visible light is irradiated as the excitation light.Therefore when the defective part of the SiC substrate is observed bythe density difference of the luminescence using the naked eye, thedensity difference of the luminescence, due to blockage by dirt and dustattached to the surface of the sample, may make it difficult todistinguish whether it is a defective part or not.

If ultraviolet light is irradiated as the excitation light, on the otherhand, the surface of the sample is not brightly lit to the naked eyewhen observed. In other words, only the luminescence from the GaN layer152 can be observed by the naked eye. As a result, when luminescencefrom the GaN layer 152 is blocked by dirt or dust attached to thesurface of the sample, luminescence intensity becomes weaker only atthat blocked portion, which can be clearly observed. Dirt or dust inthis case, includes not only particles attached to the surface of thesample during transport, but also includes crystals which are generatedduring the crystal growth of the nitride semiconductor, such as a GaNlayer, which attach unexpectedly to the surface of the sample.

As the abovementioned description clearly shows, according to thisembodiment, dirt or dust attached to the surface of the sample can bedetected at the same time, in addition to an effect similar to the firstembodiment.

As a result, dirt and dust on the surface of the sample, which causes adrop in the reliability of the device, along with the structural defectsof the SiC substrate, can be removed, and therefore further improvementof reliability of the device can be expected.

Third Embodiment

The substrate inspection device 300 of this embodiment comprises theinformation acquisition section 25 and the information processingsection 30, as the defective part specification section 200, which is amajor difference from the first embodiment. In FIG. 3, constitutionalelements the same as the constitutional elements described in the firstembodiment are denoted with the same reference numerals, and a concretedescription thereof will be omitted (this is the same as for eachembodiment herein below).

As FIG. 3 shows, the substrate inspection device 300 of this embodimentcomprises the excitation light irradiation section 10 and the defectivepart specification section 200, just like the first embodiment, but thedifference is that this defective part specification section 200 furthercomprises the information acquisition section 25 and the informationprocessing section 30.

In the information acquisition section 25, the surface area of theinspection target SiC substrate is divided into a plurality ofinspection blocks, and information on the intensity of the light(hereafter called luminance intensity) generated from the GaN layer ofeach inspection block, is acquired, and in the information processingsection 30, a retrieval block, of which the intensity of light is areference value or above, is specified from the information acquired bythe information acquisition section 25. Here information on theluminance intensity is information acquired for each retrieval block.

Now the substrate inspection device 300 will be described in detail.Here the excitation light irradiation section 10 is the same as that ofthe first embodiment, so a concrete description thereof is omitted, andthe information acquisition section 25 and information processingsection 30 of the defective part specification section 200 will bedescribed in detail.

The information acquisition section 25 is comprised of a second lens 22and image sensing device 24, such as a CCD camera. The light emittedfrom the layered product 15 a, of which an image is formed by the secondlens 22, is acquired as image data, which is information on theintensity of light in the image sensing device 24 comprising a pluralityof pixels. Each of the pixels corresponds to each of the above-mentionedretrieval blocks in one-for-one relation.

The information processing section 30 is comprised of the informationreception section 31, CPU (or Central Processing Unit) 32, input section34, storage section 35, output section 36 and stage drive section 38.

The information reception section 31 receives the abovementionedinformation on the light intensity, which the information acquisitionsection 25 acquired as digital signals, as image data. The informationreceived here is first stored in the storage section 35.

The CPU functions as a means of implementing various functions whensoftware processing is executed by programs. The CPU 32 in thisconfiguration example includes the functional means which functions asthe control section 321 and extraction section 323 (also called mappingprocessing section), to be described later respectively.

The control section 321 performs control for execution of processing ofthe predetermined functional means, control for displaying data on theoutput section 36, and control for keeping the timing of each composingelement based on the instruction which is input from the input section34 or the instruction generated inside the CPU 32, and details on theseaspects, which have been known, will be omitted.

The extraction section 323 executes mapping processing, wherein thelight intensity of each retrieval part which is acquired from theinformation on the intensity of light on the entire surface of thesample, is compared with one or more thresholds which are set in thestorage section 35 as reference values, and the area of which theintensity of light is the reference value or above is extracted as adefective part. By this mapping processing, the mapping data, which isdata on the defective position and non-defective position of the GaNlayer 152, can be acquired quickly with good reproducibility.

The input section 34 is a device comprising an input means such as akeyboard and touch panel, for inputting the necessary instruction fromthe outside during processing.

The storage section 35 is a storage device comprising such a memory asRAM and ROM, where the information and data required for processing ofthis invention are written so as to be read out freely, and informationand data generated during each processing are written so as to be readout freely.

The output section 36 is comprised of an image display device (monitor)for displaying the required information and data from the informationreception section 31 and input section 34, and required information anddata generated during processing by the CPU 32, and/or the printingdevice.

The stage drive section 38 can move the stage 12 in a direction inparallel with the sample mounting face c and a direction vertical to themounting face c of the stage 12 based on an instruction signal from theinput section 34. In this configuration example, the stage 12 is movedto a predetermined position and luminescence from the layered product 15a is observed, but the stage 12 may be fixed instead, so that the imagesensing device 24 is moved to a predetermined position and luminescencefrom the layered product 15 a is observed.

Now the substrate inspection method using the substrate inspectiondevice 300 will be described with reference to FIGS. 3 and 4.

At first, the stage 12, on which the wafer type layered product 15 a isplaced, is set at the measurement position, which is the observationstart position, by the image sensing device 24 (S501).

Then the excitation light is irradiated onto the GaN layer 152 of thelayered product 15 a in a method the same as the first embodiment(S503). In the defective part of the GaN layer 152 onto which theexcitation light is irradiated, luminescence is generated as describedin the first embodiment. As the light source, the abovementioned mercurylamp that can irradiate blue to green visible light (wavelength about400 to 600 nm) and ultraviolet light are used.

Then, according to this embodiment, an image of the light generated fromthe GaN layer 152 is formed by the second lens 22, and is converted intothe information on the intensity of the light by the image sensingdevice 24, and is acquired (S505). After acquiring the information onthe intensity of the light at the observation start position, a controlsignal for moving the stage 12 is automatically output from the controlsection 321 to the stage driving section 38. By this control signal, thestage 12 is moved to the next measurement position, and new informationis acquired in the same way by the image sensing device 24. Repeatingsuch processing moves the stage 12 so that the image sensing device 24scans the entire surface of the GaN layer 152. In this way, informationon the entire surface of the wafer can be acquired.

Responding to the acquisition of information on the intensity of light,the information reception section 31 receives this information from theinformation acquisition section 25, and sequentially stores it in thestorage section 35 (S507).

Then according to the instruction from the input section 34, theinformation reception section 31 performs mapping processing forextracting an area of which the intensity of light is at least apredetermined value as a defective part, that is, a defective position,based on the information on the intensity of the light emitted from theGaN layer 152 (S509). Based on the mapping data acquired in this way,the presence of defects of the SiC substrate can be automaticallyspecified.

An example of mapping processing in the extraction section 323 will bedescribed with reference to FIG. 5.

At first, as a pre-processing of mapping extraction, the positionalcoordinates of each retrieval block and the threshold to be theextraction criteria of the light intensity of each retrieval block arestored in the storage section 35 in advance, as described herein below.

If a defect is generated in the SiC substrate 151, a defect is alsogenerated on the GaN layer 152 thereon because of the above defect.Therefore the excitation light is irradiated onto the GaN layer 152 andit is examined in advance how the light intensity of the reflected lightthereof changes between the retrieval block area without a defect andthe retrieval block area with a defect, as statistical data, and a valueof light intensity is acquired as a reference value, that is athreshold, so that the area can be judged as a defective area if thelight intensity of this area is at least this predetermined value. Thereference value acquired in this way is stored in the storage section 35as a common reference value for the judgment of each retrieval block.Also in the storage section 35, positional coordinates on the XYcoordinate system, which is set on the wafer surface, are storedcorresponding to each retrieval block.

The extraction section 323 receives the notice of the end of acquiringinformation on the intensity of light emitted by the GaN layer 152 forthe entire wafer surface, reading this information from the storagesection 35 (S601). From this information, the positional coordinates ofthe pixel and the data of light intensity of this pixel are read foreach pixel (S603). Then responding to the read of this information, thereference value is read from the storage section 35 (S605). After thisreading of the reference value ends, the reference value and the lightintensity are compared (S607). In this comparison, if the lightintensity is the same as the reference value or is greater than thereference value (in the case of “YES”), it is judged the coordinates ofa pixel corresponding to the retrieval block which emitted this lightintensity is a position where the substrate has a defect. If the valueof the light intensity is smaller than the reference value (in the caseof NO), on the other hand, it is judged that no defect of the substrateexists at a position in the coordinates of the retrieval block whichemitted this light intensity. In this way, the abovementioned stepsS601-S607 are executed for the retrieval blocks corresponding to allareas of the wafer (S609), and this processing ends. And if necessary,the acquired mapping data can be visualized by printing it out from theoutput section 36, or by displaying the mapping data on the monitor.

By performing the abovementioned mapping processing, the mapping data onthe defective position and non-defective position of the nitridesemiconductor thin film can be acquired quickly with goodreproducibility.

As the above description clearly shows, according to the presentembodiment, an effect similar to the first embodiment can beimplemented.

Also according to the present embodiment, the position of the defectivepart of the SiC substrate can be specified automatically andefficiently.

Fourth Embodiment

At first, a manufacturing method for a nitride semiconductor device ofthe present embodiment will be briefly described with reference to FIGS.6 (A), 6(B) and 6(C). This manufacturing method, for example, comprisesthe following manufacturing steps (1)-(3).

(1) As FIG. 6 (A) shows, the GaN layer 152 to be a channel layer isformed on the wafer type SiC substrate 151, as the nitride semiconductorthin film, to form the layered product 15 a. Specifically, the GaNbuffer layer (not illustrated), which was formed by the MOCVD method, ismodified to the GaN layer 152 and formed on the SiC substrate 151. Thislayered product 15 a may be called a wafer or pre-processing waferherein below. The GaN type HEMT to be described here has a generalstructure, and the description of the specific formation method for thecrystal growth of each layer, which is already known, will be omitted.

After forming the GaN layer 152, a mark 70, which can be identified fromthe outside, such as a symbol or number for identifying an individualwafer, is created on the surface of the layered product 15 a. The mark70 is created by depositing aluminum (Al), for example, in the marginarea b, which is an area outside the device formation area a on thewafer surface. The mark 70 may be formed as convex or concave by etchingthe surface of the GaN layer 152, rather than by the metal depositionmethod. This mark 70 may also be used as the alignment mark for a photomask, which is used in the HEMT manufacturing step. In other words, theposition, count and shape of the mark 70 can be designed freelyaccording to the purpose and design.

(2) As FIG. 6 (B) shows, this layered product 15 a is processed so thatthe mark 70 can be maintained in a status to be identifiable, and theprocessed layered product 15 b is obtained. In this configurationexample, a GaN type HEMT 15 b, for example, is created into the layeredproduct 15 a as the nitride semiconductor device.

Processing on the layered product 15 a is not limited to the aboveexample. All that is needed to process is depositing a film for formingthe nitride semiconductor device on the GaN layer 152 by a requiredprocessing, then removing a part of the deposited film covering the mark70 so as to expose the mark 70. In this configuration example, theelectronic supply layer 153 and each electrode (gate electrode 104,source electrode 106 and drain electrode 108), which are requiredcomposing elements of the nitride semiconductor device, are formed onthe GaN layer 152. Specifically, the electronic supply layer 153 iscreated by forming an Al_(0.2)Ga_(0.8)N layer by the MOCVD method. Thegate electrode 104 is formed by sequentially layering nickel (Ni) andgold (Au) on the electronic supply layer 153. The source electrode 106and drain electrode 108 are formed by layering titanium (Ti), aluminumand gold sequentially on the electronic supply layer 153 at positionswhich sandwich the gate electrode 104 without contact.

Then, as is already known, the passivation film (not illustrated) isformed so as to cover each created composing element. The layeredproduct 15 b may be called a processed layered product or processedwafer, and a layered product 15 a may simply be referred to as a wafer.

(3) As FIG. 6 (C) shows, the layered product 15 b is diced along thedicing layer by the scribing method or dicing method, and the chips 80are obtained.

In the manufacturing method comprising the above-mentioned manufacturingsteps, according to this embodiment of the present invention specifiesthe position of the defective part (defective position) of the wavertype SiC substrate in advance in the status of the pre-processing waferin the stage of the above step (1). By this, when the processed wafer isdiced into chips, the chip having a defective part can be eliminatedbased on the information on this defective position.

Now the manufacturing device 900 of the nitride semiconductor devicewill be described in detail with reference to FIG. 7.

FIG. 7 is a diagram depicting the configuration of the manufacturingapparatus 900 of the nitride semiconductor device of the presentembodiment. In this embodiment, the mapping data described in the thirdembodiment is stored in association with the wafer type sample for whichthis mapping data is acquired, so as to use this mapping data formanufacturing the nitride semiconductor device.

As FIG. 7 shows, the manufacturing device 900 of the nitridesemiconductor device of this embodiment further comprises the secondinformation acquisition section 40, layered product processing section45, cutting section 50 and elimination section 60, in addition to theexcitation light irradiation section 10 and defective part specificationsection 800, just like the first embodiment.

Now the manufacturing device 900 of the nitride semiconductor devicewill be described in detail. In this embodiment, the case when thenitride semiconductor device is a GaN type HEMT will be described as anexample.

The excitation light irradiation section 10 has a similar configurationas the first embodiment, so a concrete description here is omitted andthe defective part specification section 800, second informationacquisition section 40, layered product processing section 45, cuttingsection 50 and elimination section 60 will be described in detail.

The defective part specification section 800 of this configurationexample further comprises the first information acquisition section 65and information processing section 85.

The first information acquisition section 65 comprises a second lens 22and an image sensing device 24, such as a CCD camera. This firstinformation acquisition section 65 acquires the light emitted from thelayered product 15 a, of which an image is formed by the second lens 22,as the first information on the intensity of the light by the imagesensing device 24.

The information processing section 85 comprises a first informationreception section 33, CPU 75, input section 34, storage section 35,output section 36, stage drive section 38 and second informationreception section 37.

The first information reception section 33 receives the abovementionedfirst information on the intensity of light, which the first informationacquisition section 65 acquired as digital signals, as image data. Thefirst information received here is stored once in the storage section35.

The second information reception section 37 receives the secondinformation on the mark 70 of the processed layered product 15 b,acquired by the later mentioned second information acquisition section40, as image data.

The CPU 75 has the same functions as the third embodiment, and in thiscase comprises a functional means which functions as a control section751, first recognition section 753, extraction section (mappingprocessing section) 755, second recognition section 757, and defectivepart collation section 759, which will be described later.

The control section 751 controls the execution of processing of theother required functional means, controls write and/or read ofinformation and data for the storage section 35, controls for displayingthe output of the signals to the output section 36, and controls thetiming of each composing element based on the instruction which wasinput from the input section 34 or the instruction generated inside theCPU 75.

The first recognition section 753 recognizes a mark 70 formed on thelayered product 15 a based on the first information which the firstinformation reception section 33 received.

Now an example of the recognition processing operation by the firstrecognition section will be described with reference to FIG. 8.

At first, information on a true reference mark (that is a mark formed inthe abovementioned step (1)) for each wafer is stored in the storagesection 35 in advance as the pre-processing of the recognitionprocessing.

The first recognition section 753 reads the first information from thestorage section 35 for each pixel responding to the reception of thefirst information by the first information reception section 33 (S1010).

It is judged whether the information on the mark 70 for waferidentification formed for each wafer exists in the first informationwhich was read (Y: “YES”) or not (N: “NO”) (S1030).

If information on the mark 70 in the first information exists (Y), it isjudged which one of the reference marks of the wafer the mark 70 is(S1050).

This judgment is performed by collating the reference marks of the waferstored in the storage section 35 and the information on the mark whichwas read from the first information. If collation matches (Y), the markwhich was read is recognized as a true identification mark, and isstored in the storage section 35 in association with the firstinformation on the mark of the layered product 15 a and thepre-processing mapping data. In each step S1030 and S1050, if thejudgment is “NO” or “Mismatch”, that is if (N), then processing returnsto S1010. When each step S1010 to S1050 ends for all the retrievalblocks, the recognition processing operation ends.

The extraction section 755 has a function similar to the thirdembodiment. The extraction section 755 compares the light intensity ofeach pixel, which is acquired from the first information on theintensity of light from each retrieval block on the entire face of thesample, and one or more of the thresholds of the light intensity whichis set as a reference value in the storage section 35 in advance. Inthis way, the extraction section 755 performs mapping processing forextracting the area of which the intensity of light is the referencevalue or above as a defective part. This mapping processing can beexecuted by a same method as the third embodiment. Here a defective areaof the wafer is stored in the storage section 35 as positionalcoordinate information for each wafer 15 a.

The second recognition section 757 recognizes the mark 70 formed on theprocessed layered product 15 b based on the second information receivedby the later mentioned second information reception section 37. Thisprocessing is substantially the same as the recognition processing inthe first recognition section 753, which was described with reference toFIG. 8. In this case, the layered product is a processed layered product(that is, processed wafer) 15 b, and processing is performed on thesecond image data, instead of the first image data. Therefore in FIG. 8,the step S1010 is the processing for the second image data.

The defective part collation section 759 specifies the position of thedefective part of the processed layered product 15 b based on the firstinformation.

Now an example of the defective position specification processing forthe processed layered product 15 b in the defective part collationsection 759 will be described with reference to FIG. 9.

Specifically, the mark 70 recognized by the second recognition section757 and the mark 70 stored in the storage section 35 along with themapping data based on the first information are collated (S1110). Ifcollation matches (Y), the mapping data on the defective part of the SiCsubstrate of the pre-processing layered product 15 a, having the matchedmark (S1130) is read. The positional coordinates of the location of thedefective part included in the pre-processing mapping data is specified(S1150). By this specification of the positional coordinate of thedefective part, the positional coordinate of the area where thedefective part is generated in the processed layered product 15 b isspecified.

These steps S1110-S1150 are executed for the entire wafer, that is thelayered product (S1170). If the result is NO in steps S1110 and S1170,processing returns to S1110.

By this, the defective position of the SiC substrate 151, which causesdefect propagation to the GaN layer 152, can also be specified in thestatus of the processed layered product 15 b.

The second information acquisition section 40 has an ordinary imagesensing device, which comprises a plurality of pixels with a similarconfiguration used for a CCD camera, for example. The second informationacquisition section 40 acquires the second information on the mark 70formed on the layered product 15 b. This second information acquisitionsection 40 may be formed in the configuration of the excitation lightirradiation section 10 of the above described substrate inspectiondevice 100 (see first embodiment), where the light source 13 composingelement thereof, is not removed or is removed.

The layered product processing section 45 is a conventional device whichperforms film deposition and etching on the layered product 15 a tocreate the nitride semiconductor device as the final device, and may bea standalone configuration or may be combined with other pluralities ofdevices.

The layered product processing section 45 also performs processing forremoving the film portion covering the mark 70 to expose this mark 70.

After the above mapping data is acquired, the required processing by thelayered product processing section 45 is started by an instruction fromthe input section 34 after the pre-processing layered product 15 a isautomatically transported to the layered product processing section 45.

By this processing, the layered product 15 a becomes the processedlayered product 15 b, where the mark 70 is maintained in the status tobe identifiable from the outside. Here the layered product 15 a isprocessed and a wafer type GaN type HEMT 15 b is created. When thisprocessing ends, the processed layered product 15 b is automaticallytransported to the second information acquisition section 40 by aninstruction from the input section 34, and is set at a predeterminedposition.

In the cutting section 50, the mark 70 of the processed layered product15 b and the positional coordinate information of the defective part ofthis processed layered product 15 b are stored in the storage section35, then the processed layered product 15 b is automatically transportedto the cutting section 50, and is set at a predetermined position.Responding to the end of this setting, the cutting section 50 cuts theprocessed layered product 15 b along the dicing lines, and separates itinto a plurality of chips. After this step, each chip is still securedon the dicing tape.

Among the plurality of chips which were cut by the cutting section andremain attached to the dicing tape, the elimination section 60eliminates a chip in an area which was judged as a defective part by thedefective part collation section 759 by a robot arm with tweezers, forexample. Specifically, the elimination section 60 reads the positionalcoordinate information on the defective position of the SiC substrate ofthe processed layered product 15 b, and specifies and eliminates thedefective chip.

Now method of the manufacturing a nitride semiconductor device using themanufacturing apparatus 900 for a nitride semiconductor device will bedescribed with reference to FIG. 6 to FIG. 10.

At first, the stage 12, on which the wafer type layered product 15 a isplaced, is set at the observation start position by the image sensingdevice 24 (S1510).

Then by the same method as the first embodiment, the excitation light isirradiated onto the GaN layer 152 of the layered product 15 a (S1530).At this time, in the defective part of the GaN layer 152 onto which theexcitation light is irradiated, luminance is generated, just like thecase of the first embodiment. For the light source, the above-mentionedmercury lamp, which can irradiate blue to green visible light(wavelength about 400 to 600 nm) and ultraviolet light are used.

Then the luminescence from the GaN layer 152, of which image is formedby the second lens 22, is converted into the first information and isacquired by the image sensing device 24 (S1550). After the firstinformation is acquired at the observation start position, a controlsignal for moving the stage 12 to the stage drive section 38 isautomatically output from the control section 751. By this controlsignal, the stage 12 is moved to the next measurement position, and newfirst information is acquired in the same way by the image sensingdevice 24. By repeating this scanning process, the image sensing device24 scans the entire surface of the GaN layer 152, and acquiresinformation on the intensity of the light on the entire surface of thewafer, that is the first information. At this time, the firstinformation includes information on the abovementioned mark 70 inaddition to the information on the intensity of the light emitted fromthe GaN layer 152.

Responding to the acquisition of the first information, the firstinformation reception section 33 receives the first information from thefirst information acquisition section 65, and stores it in the storagesection 35 (S1570).

Then the first information is read from the storage section 35 by aninstruction from the input section 34, and the mark 70, formed on thepre-processing layered product 15 a, is recognized based on this firstinformation (S1590).

Then based on the first information of the layered product 15 acorresponding to the recognized mark 70, mapping processing, forextracting the area of which the intensity of light is at least apredetermined value as a defective part, that is a defective position,is performed by an instruction from the input section 34 (S1610).

Then the mark recognized by the first recognition section 753 and themapping data on this mark 70 are associated and stored in the storagesection 35 by an instruction from the input section 34 (S1630).

In this way, by storing and managing the data on the defective positionand non-defective position for each wafer as mapping data, theinformation can be read when necessary. Here the recognized mark andmapping data on this mark are associated and stored in the storagesection 35. However, instead of this, the recognized mark and the firstinformation on this mark may be associated and stored, and mappingprocessing may be performed on this first image data in a latter step.Or if necessary, the mapping data may be read from the storage section35, and displayed as an image in the output section 36.

Then the layered product 15 a is transported to the layered productprocessing section 45 by an instruction from the input section 34, so asto create the nitride semiconductor device. If the mark 70 is coveredwith some film after this device is created, the portion of the filmcovering the mark 70 is removed. In this way, that is the GaN type HEMT15 b, where the mark 70 remains in a status to be identifiable from theoutside, is created (S1650).

Then the processed layered product 15 b is set at the observation startposition to acquire the second information on the mark 70 of theprocessed layered product 15 b (S1670).

Then the image sensing device (not illustrated) scans the entire surfaceof the processed layered product 15 b, and the second information on themark 70 of the processed layered product 15 b is acquired (S1690).

Then, responding to the acquisition of the second information, thesecond information reception section 37 receives the second informationfrom the second information acquisition section 40, and stores it in thestorage section 35 (S1710).

Then the second information is read from the storage section 35 by theinstruction from the input section 34, and the mark 70 of the processedlayered product 15 b is recognized (S1730).

Then the position of the defective part, that is the defective position,of the GaN layer 152 of the processed layered product 15 b is specified(S1750). Specifically, the mapping data which is stored associated witha mark 70, the same as the mark recognized by the second recognitionsection 757, is read from the storage section 35 by an instruction fromthe input section 34. And based on the mapping data which was read, thedefective position of the GaN layer 152 of the processed layered product15 b is judged. In this way, the defective position of the SiCsubstrate, in the status of the processed layered product 15 b, can bespecified using the mapping data which was acquired in advance beforeprocessing the layered product.

Then the processed layered product 15 b, attached to the dicing tape, iscut into individual chips 80 (S1770).

Then a chip, including an area judged as a defective part by thedefective part collation section 759, is picked up by tweezers installedat the tip of a robot arm, and is eliminated (S1790).

In this way, the chip having a defective part can be selected by themapping data which has been acquired in advance, and a reliabilityevaluation inspection need not be performed again for the individualchip which was cut.

As the above description clearly shows, according to the embodiment ofthe present invention, effects similar to the first embodiment can beimplemented.

Also according to the present invention, the position of the defectivepart of the SiC substrate of the wafer type processed layered productcan be specified using the mapping data which was acquired beforeprocessing the layered product in advance, so it is unnecessary tospecify the defective position again after processing.

Therefore among the chips acquired by cutting the processed layeredproduct, chips having the defective part in the SiC substrate can beefficiently selected.

The configuration of the present invention is not limited to the aboveembodiments. In other words, this invention can be applied in any stepsunder suitable conditions.

For example, for the light source, a xenon lamp or halogen lamp can beused freely, other than the mercury lamp.

The case when the GaN layer is used for the nitride semiconductor thinfilm was described, but a film can be used if at least one of a GaNlayer, AlGaN layer and InGaN layer is included.

For the nitride semiconductor device using the nitride semiconductorthin film, a high frequency and high output transistor, blue laser andblue light emitting diode can be freely used other than HEMT.

In the abovementioned description, each processing for thepre-processing layered product or processed layered product is performedby an instruction from the input section, but may be startedautomatically.

In the description on the abovementioned fourth embodiment, thedefective part specification section, and the layered product processingsection, cutting section and elimination section are connected via thecontrol device, but the configuration is not limited to this. Thereforethe layered product processing section, cutting section and eliminationsection may be separated from the control device and installed asindependent devices. In this case, the required information acquired bythe control device may be stored in a predetermined storage section inadvance, so that this information can be used for the layered productprocessing section, cutting section and elimination section via thisstorage section.

In the fourth embodiment, the entire surface of the layered product isprocessed, and the position of the defective part of the SiC substrateof the finished processed layered product is specified using the mappingdata which has been acquired before processing the layered product inadvance, so as to eliminate unnecessary chips having a defective part.

However, processing on the layered product may be performed only on theSiC substrate portion which does not having defective parts, based onthe mapping data, so that after cutting the layered product, chips otherthan the chips that include the processed layered product areeliminated.

1. An apparatus for manufacturing a nitride semiconductor device,comprising: an excitation light irradiation section for irradiatingexcitation light onto a nitride semiconductor thin film out of a layeredproduct where said nitride semiconductor thin film is deposited on asilicon carbide substrate; a defective part specification section forspecifying a position of a defective part of said silicon carbidesubstrate using light based on the defects of said silicon carbidesubstrate generated in said nitride semiconductor thin film by saidexcitation light; a cutting section for processing said layered productand then cutting said processed layered product at each predetermineddevice dimension to create a plurality of chips; and an eliminationsection for eliminating chips having said defective part from saidchips.
 2. The apparatus for manufacturing a nitride semiconductor deviceaccording to claim 1, wherein said defective part specification sectionfurther comprises first information acquisition section for detectingsaid light and acquiring a first information including information onthe intensity of said light, and an information processing section forspecifying an area where the intensity of said light is a referencevalue or above as said defective part from said first information. 3.The apparatus for manufacturing a nitride semiconductor device accordingto claim 1, wherein when said layered product on which a mark that canbe identified from the outside is formed in advance is used, saidapparatus for manufacturing a nitride semiconductor device comprises asecond information acquisition section for acquiring second informationon said mark formed on said processed layered product, and saiddefective part specification section comprises: a first recognitionsection for recognizing said mark from said first information; a storagesection for storing said first information and said mark recognized insaid first recognition section associating with each other; a secondrecognition section for recognizing a mark of said processed layeredproduct, based on said second information acquired by said secondinformation acquisition section; and a defective part collation sectionfor reading and collating said first information, that is storedassociated with a mark the same as the mark of said recognized processedlayered product, from said storage section, and specifying a defectivepart of said processed layered product based on said first informationthat was read.
 4. The apparatus for manufacturing a nitridesemiconductor device according to claim 3, further comprises aprocessing section for processing the film for forming the nitridesemiconductor device on said layered product so that said mark of saidprocessed layered product can be maintained in the status to beidentifiable from the outside, when said mark of said processed layeredproduct is recognized.
 6. The apparatus for manufacturing a nitridesemiconductor device according to claim 1, wherein said excitation lightvisible light of which wavelength is 400 to 600 nm.
 7. The apparatus formanufacturing a nitride semiconductor device according to claim 1,wherein said excitation light is ultraviolet light.